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US 7,902,009 B2Granted
Graded high germanium compound films for strained semiconductor devices
AssigneeIntel Corporation
InventorsDanielle Simonelli, Anand Murthy
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Abstract
Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
Claims10
A method of forming a crystalline compound film, comprising:
- selectively forming a low germanium content seed layer;
- selectively forming a transition layer on the low germanium content seed layer;
- the transition layer formed while decrementing a process temperature from a first temperature to a second temperature, and while decrementing a dichlorosilane, hydrogen chloride, and germane flow from a higher flow to a lower flow;
- and
- selectively forming a high germanium content layer on the transition layer.
2 more elements
A method comprising:
- forming a gate stack and a pair of spacers on a multi-gate body, wherein the spacers are formed on laterally opposite sides of the gate stack;
- etching the multi-gate body at regions adjacent to the spacers;
- and
- selectively depositing a graded high-germanium content silicon germanium stack to form a source region and a drain region directly adjacent to the multi-gate body, wherein the graded high-germanium content silicon germanium stack is formed of a silicon-germanium seed layer, a transition layer, and a high germanium content layer, and wherein the transition layer is formed while decrementing a dichlorosilane, hydrogen chloride, and germane flow from a higher flow to a lower flow.
1 more element
Dependencies are inferred from the claim text.