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US 12,757,429 B2Granted
Semiconductor device including multiple spacers and method for preparing the same
AssigneeNanya Technology Corporation
InventorChih-Wei Huang
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Abstract
A semiconductor device and a method for preparing the semiconductor structure are provided. The semiconductor device includes a substrate; a gate electrode disposed on the substrate; a first metal contact disposed in the gate electrode; a first spacer disposed on a sidewall of the gate electrode; and a second spacer covering the first spacer; wherein the first spacer includes dopants.
Claims11
A semiconductor device, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a first metal contact disposed in the gate electrode;
- a first spacer disposed on a sidewall of the gate electrode;
- and
- a second spacer covering an outer surface of the first spacer,
- wherein the first spacer and the second spacer are disposed on the substrate;
- wherein a surface roughness of the outer surface of the first spacer is greater than a surface roughness of an outer surface of the second spacer;
- wherein the first spacer comprises dopants located along the outer surface of the first spacer.
6 more elements
Dependencies are inferred from the claim text.