H10D 30/608
Having non-planar bodies
Official title: {having non-planar bodies, e.g. having recessed gate electrodes}
H10D30/608 (Having non-planar bodies) appears on 1,638 US grants and 1,728 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,638
- Published applications
- 1,728
- Assignees
- 249
- Inventors
- 2,401
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 11 | 0 |
| 1996 | 15 | 0 |
| 1997 | 13 | 0 |
| 1998 | 18 | 0 |
| 1999 | 23 | 0 |
| 2000 | 35 | 0 |
| 2001 | 44 | 13 |
| 2002 | 38 | 47 |
| 2003 | 47 | 47 |
| 2004 | 36 | 50 |
| 2005 | 41 | 90 |
| 2006 | 54 | 126 |
| 2007 | 53 | 126 |
| 2008 | 63 | 105 |
| 2009 | 83 | 83 |
| 2010 | 89 | 58 |
| 2011 | 68 | 82 |
| 2012 | 69 | 98 |
| 2013 | 77 | 101 |
| 2014 | 90 | 75 |
| 2015 | 99 | 113 |
| 2016 | 100 | 94 |
| 2017 | 86 | 61 |
| 2018 | 69 | 60 |
| 2019 | 53 | 41 |
| 2020 | 38 | 48 |
| 2021 | 41 | 40 |
| 2022 | 35 | 44 |
| 2023 | 33 | 44 |
| 2024 | 39 | 34 |
| 2025 | 34 | 29 |
| 2026 | 15 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Device with workfunction metal in drift region16 Jun 2026US 12,660,234 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device and method of fabricating the same16 Jun 2026US 12,660,283 B2United Microelectronics Corp.
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- Hybrid fin-dielectric semiconductor device30 Jul 2026US 2026/0223432 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Active programmable electronic devices for molecular biological analysis and diagnostics1,006US 5,605,662 ANanogen, Inc. · 1997
- Process for making semiconductor device with epitaxially grown source and drain543US 6,372,583 B1Intel Corporation · 2002
- Method for silicon based dielectric chemical vapor deposition432US 7,473,655 B2APPLIED Materials.Inc. · 2009
- Graded high germanium compound films for strained semiconductor devices429US 7,902,009 B2Intel Corporation · 2011
- Methods and procedures for molecular biological analysis and diagnostics421US 6,051,380 ANanogen, Inc. · 2000