Method for silicon based dielectric chemical vapor deposition

A method for depositing a silicon-containing film on a substrate, the method comprising:

• heating a substrate disposed in a processing chamber to a temperature between about 400-500 degrees Celsius;
• flowing a silicon-free, nitrogen and carbon containing chemical into the processing chamber, the silicon-free, nitrogen and carbon containing chemical comprising (H3C)—N═N—H;
• flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber, wherein the silicon-containing source chemical is at least one of (SiR3)3—N, (SiR3)2N—N(SiR3)2 and (SiR3)N═(SiR3)N, wherein R is hydrogen (H), or a hydrocarbon reagent or a fragment consisting of methyl, ethyl, phenyl, tertiary butyl and their combinations;
• and
• depositing a silicon and nitrogen containing film on the substrate.