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US 6,372,583 B1Granted
Process for making semiconductor device with epitaxially grown source and drain
AssigneeIntel Corporation
InventorSunit Tyagi
Life of this patent
Estimating the term…
Abstract
A method for making a semiconductor device. In that method, source and drain regions are epitaxially grown on a first part of a substrate. After a gate oxide is formed on a second part of the substrate, an etched polysilicon layer is formed on the gate oxide.
Claims13
A method for making a semiconductor device comprising:
- forming a mask on a first part of a substrate;
- forming trenches adjacent to the mask to define a second part of the substrate;
- applying an epitaxial growth process to fill the trenches to create a heavily doped portion of a channel and epitaxially grown source and drain regions, such that the source and drain regions have sides and are separated by the channel, and wherein the epitaxial growth process for creating the source and drain regions causes portions of those regions to extend above the first part of the substrate;
- forming spacers on the sides of the source and drain regions;
- then
- forming a gate oxide on the first part of the substrate;
- then
- forming an etched polysilicon layer on the gate oxide.
5 more elements
A method for making a semiconductor device comprising:
- forming a mask on top of a substrate;
- forming trenches within the substrate that are adjacent to the mask;
- filling a first part of the trenches by epitaxially growing heavily doped regions having a first conductivity type to form a heavily doped portion of a channel;
- filling a second part of the trenches by epitaxially growing doped regions having a second conductivity type to form source and drain regions that have sides;
- removing the mask;
- forming spacers on the sides of the source and drain regions;
- forming a gate oxide on the substrate between the spacers;
- and
- forming an etched polysilicon layer on the gate oxide.
6 more elements
A method for making a semiconductor device comprising:
- depositing a first silicon nitride containing layer on top of a first silicon dioxide layer, which has been formed on a substrate;
- etching the first silicon nitride layer to form a mask;
- forming trenches within the substrate that are adjacent to the mask;
- epitaxially growing heavily doped regions having a first conductivity type to fill a first part of the trenches to form a heavily doped portion of a channel;
- epitaxially growing doped regions having a second conductivity type to fill a second part of the trenches to form source and drain regions that have sides and are separated by the channel;
- removing the mask and the first silicon dioxide layer;
- forming a second silicon dioxide layer over the channel and the source and drain regions;
- depositing a second silicon nitride containing layer on top of the second silicon dioxide layer;
- etching the second silicon nitride containing layer and the second silicon dioxide layer to form spacers on the sides of the source and drain regions;
- forming a gate oxide on the substrate between the spacers;
- and
- forming an etched polysilicon layer on the gate oxide.
9 more elements
Dependencies are inferred from the claim text.