Semiconductor device

A semiconductor device, comprising:

• a substrate, comprising a high-voltage area, a medium-voltage area, and a low-voltage area;
• two first doped regions, disposed in the substrate and within the high-voltage area, the two first doped regions being parallel extended in a first direction;
• a first gate electrode, disposed on the substrate and within the high-voltage area, the first gate electrode extending in the first direction and appearing between the two first doped regions,
• a second doped region, disposed in the substrate and within the medium-voltage area, the second doped region extending in the first direction;
• a second gate electrode, disposed on the substrate and within the medium-voltage area, the second gate electrode extending in the first direction and partially overlaying the second doped region;
• a plurality of fin-shaped structures, disposed in the substrate and within the low-voltage area, the plurality of fin-shaped structures being parallel extended in the first direction;
• a third gate electrode, disposed on the substrate and within the low-voltage area, the third gate electrode extending in a second direction that is perpendicular to the first direction, across the plurality of fin-shaped structures;
• and
• a shallow trench isolation structure, disposed in the substrate and surrounding the two first doped regions, the second doped region, and the plurality of fin-shaped structures, respectively;
• wherein the first gate electrode, the second gate electrode, each of the two first doped regions, and the second doped region each comprises a long side extending in the first direction and a short side extending in the second direction, the third gate electrode comprises a long side extending in the second direction and a short side extending in the first direction, and the long side of the first gate electrode is the same as the long side of the second gate electrode, and is greater than the long side of the third gate electrode.