Hybrid fin-dielectric semiconductor device

A semiconductor structure comprising:

• a gate electrode disposed over a substrate;
• a source region and a drain region disposed on opposite sides of the gate electrode;
• a lightly doped source (LDS) region disposed under the source region, and a lightly doped drain (LDD) region disposed under the drain region;
• and
• a hybrid fin-dielectric (HFD) region disposed in the substrate underneath the gate electrode, wherein the HFD region comprises fins separated from one another by a dielectric, and wherein the dielectric extends between the LDD region and the LDS region.

A method of forming a semiconductor structure, comprising:

• depositing a first mask over a substrate with openings extending through the first mask;
• etching the substrate through the openings of the first mask to form a plurality of fins from the substrate;
• removing the first mask;
• depositing a second mask over the substrate with an opening aligned over the fins;
• forming a dielectric between the plurality of fins;
• removing the second mask;
• forming a source region and drain region on opposing sides of the dielectric and the plurality of fins;
• and
• forming a gate electrode aligned over the dielectric and the plurality of fins.