Method of manufacturing semiconductor device, and semiconductor device
AssigneeSony Group Corporation
InventorYuki Miyanami
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes: the first step of forming a gate electrode over a silicon substrate, with a gate insulating film; and the second step of digging down a surface layer of the silicon substrate by etching conducted with the gate electrode as a mask. The method of manufacturing the semiconductor device further includes the third step of epitaxially growing, on the surface of the dug-down portion of the silicon substrate, a mixed crystal layer including silicon and atoms different in lattice constant from silicon so that the mixed crystal layer contains an impurity with such a concentration gradient that the impurity concentration increases along the direction from the silicon substrate side toward the surface of the mixed crystal layer.
Claims26
A method of manufacturing a semiconductor device, comprising:
- the first step of forming a gate electrode over a silicon substrate, with a gate insulating film;
- the second step of digging down a surface layer of said silicon substrate by etching conducted with said gate electrode as a mask;
- and
- the third step of epitaxially growing, on the surface of said dug-down portion of said silicon substrate, a mixed crystal layer including silicon and atoms different in lattice constant from silicon so that said mixed crystal layer contains an impurity with such a concentration gradient that the impurity concentration increases along the direction from said silicon substrate side toward the surface of said mixed crystal layer,
- wherein,
- said third step includes epitaxially growing said mixed crystal layer so that said mixed crystal layer contains the impurity with said concentration gradient such that said impurity concentration increases stepwise along the direction from said silicon substrate side toward the surface of said mixed crystal layer.
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a gate electrode over a gate insulating film on a silicon substrate;
- a second step of digging down a surface of the silicon substrate in a manner that forms a dug-down portion of the silicon substrate by etching conducted with said gate electrode as a mask;
- and
- a third step of epitaxially growing, on the surface of the dug-down portion of the silicon substrate, a mixed crystal layer including
- silicon and atoms different in lattice constant from silicon, wherein the mixed crystal layer comprises:
- a first layer that is grown on a surface of the dug-down portion,
- a second layer that is grown on the first layer, and
- a third layer that is grown on the second layer, so that the mixed crystal layer contains an impurity with such a concentration gradient that a concentration of the impurity increases stepwise along a first direction from the silicon substrate toward a surface of the mixed crystal layer, the concentration gradient of the impurity being greatest in the second layer among the first layer, the second layer, and the third layer,
- wherein the third layer is a topmost layer of the mixed crystal layer, protrudes in the first direction from a surface level of the silicon substrate, and has a film thickness of 50 to 100 nanometers (“nm”).
Dependencies are inferred from the claim text.