H10D 30/69
Igfets having charge trapping gate insulators
Official title: IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D30/69 (Igfets having charge trapping gate insulators) appears on 5,231 US grants and 6,000 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,231
- Published applications
- 6,000
- Assignees
- 501
- Inventors
- 5,105
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 11 | 0 |
| 1978 | 13 | 0 |
| 1979 | 8 | 0 |
| 1980 | 7 | 0 |
| 1981 | 8 | 0 |
| 1982 | 8 | 0 |
| 1983 | 2 | 0 |
| 1984 | 5 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 16 | 0 |
| 1995 | 5 | 0 |
| 1996 | 5 | 0 |
| 1997 | 7 | 0 |
| 1998 | 7 | 0 |
| 1999 | 3 | 0 |
| 2000 | 12 | 0 |
| 2001 | 25 | 7 |
| 2002 | 25 | 41 |
| 2003 | 48 | 92 |
| 2004 | 92 | 147 |
| 2005 | 109 | 197 |
| 2006 | 145 | 264 |
| 2007 | 128 | 255 |
| 2008 | 142 | 289 |
| 2009 | 187 | 291 |
| 2010 | 219 | 256 |
| 2011 | 227 | 273 |
| 2012 | 242 | 267 |
| 2013 | 274 | 300 |
| 2014 | 364 | 399 |
| 2015 | 387 | 368 |
| 2016 | 384 | 308 |
| 2017 | 289 | 248 |
| 2018 | 247 | 229 |
| 2019 | 246 | 293 |
| 2020 | 265 | 288 |
| 2021 | 237 | 278 |
| 2022 | 199 | 246 |
| 2023 | 185 | 202 |
| 2024 | 178 | 160 |
| 2025 | 165 | 157 |
| 2026 | 76 | 145 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Synaptic element for performing polynomial operation and electronic circuit including the same15 Sep 2026US 12,740,101 B2Electronics and Telecommunications Research Institute
- Reconfigurable complementary metal oxide semiconductor device and method15 Sep 2026US 12,740,143 B2GlobalFoundries Dresden Module One Limited Liability Company & Co. KG
- Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same25 Aug 2026US 12,720,740 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices, and related methods and memory devices8 Oct 2026US 2026/0313897 A1Micron Technology, Inc.
- Semiconductor device and method of manufacturing the same8 Oct 2026US 2026/0313899 A1SK hynix Inc.
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping1,069US 5,768,192 ASaifun Semiconductors Ltd. · 1998
- Nonvolatile memory device, operating method thereof and memory system including the same633US 8,559,235 B2Samsung Electronics Co., Ltd. · 2013
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Integrated circuits having a contact region and methods for manufacturing the same490US 7,915,667 B2Qimonda AG · 2011