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US 2026/0313899 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong LEE, Seung Ho PYI, Seung Jun LEE
Life of this patent
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Abstract
A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.
Claims17
A semiconductor device, comprising:
- a stacked structure including conductive layers and insulating layers stacked alternately with each other;
- a plurality of semiconductor patterns extending through the stacked structure;
- a source layer overlapping the stacked structure and coupling the plurality of semiconductor patterns to each other, wherein the source layer includes at least one of polysilicon or a silicide material;
- a peripheral circuit disposed under the stacked structure;
- at least one first contact plug electrically connecting the peripheral circuit to the plurality of semiconductor patterns;
- and
- at least one second contact plug electrically connecting the peripheral circuit to the source layer.
4 more elements
A semiconductor device, comprising:
- a first stacked structure including first conductive layers and first insulating layers alternately stacked;
- a second stacked structure adjacent to the first stacked structure in a first direction and including second conductive layers and second insulating layers alternately stacked;
- first semiconductor patterns extending through the first stacked structure;
- second semiconductor patterns extending through the second stacked structure;
- a first source layer overlapping the first stacked structure in a vertical direction, the first source layer connecting the first semiconductor patterns, wherein the first source layer includes at least one of polysilicon or a silicide material;
- a peripheral circuit disposed under the first stacked structure and the second stacked structure;
- at least one first contact plug electrically connecting the peripheral circuit to the first semiconductor patterns;
- and
- at least one second contact plug electrically connecting the peripheral circuit to the first source layer.
6 more elements
A semiconductor device, comprising:
- a stack including conductive layers and insulating layers stacked alternately with each other;
- channel layers extending through the stack;
- a source structure overlapping the stack and coupling the channel layers, wherein the source structure includes at least one of polysilicon or a silicide material;
- a peripheral circuit overlapping the stack;
- a slit structure passing through the stack;
- a first contact plug electrically connecting the peripheral circuit to one of the channel layers;
- and
- a second contact plug electrically connecting the peripheral circuit to the source structure.
5 more elements
Dependencies are inferred from the claim text.