H10D 30/691
Having more than two programming levels
Official title: {having more than two programming levels}
H10D30/691 (Having more than two programming levels) appears on 694 US grants and 768 published applications in this corpus.
Search patents in H10D- Granted patents
- 694
- Published applications
- 768
- Assignees
- 158
- Inventors
- 927
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 13 | 3 |
| 2002 | 12 | 9 |
| 2003 | 20 | 41 |
| 2004 | 33 | 70 |
| 2005 | 58 | 88 |
| 2006 | 60 | 103 |
| 2007 | 66 | 109 |
| 2008 | 63 | 75 |
| 2009 | 68 | 53 |
| 2010 | 55 | 34 |
| 2011 | 40 | 33 |
| 2012 | 25 | 10 |
| 2013 | 25 | 11 |
| 2014 | 19 | 21 |
| 2015 | 17 | 13 |
| 2016 | 21 | 15 |
| 2017 | 19 | 14 |
| 2018 | 14 | 10 |
| 2019 | 12 | 19 |
| 2020 | 15 | 12 |
| 2021 | 15 | 11 |
| 2022 | 8 | 5 |
| 2023 | 2 | 5 |
| 2024 | 4 | 1 |
| 2025 | 2 | 0 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Synaptic element for performing polynomial operation and electronic circuit including the same15 Sep 2026US 12,740,101 B2Electronics and Telecommunications Research Institute
- Metal hybrid charge storage structure for memory25 Nov 2025US 12,484,225 B2Intel NDTM US LLC
- Nonvolatile charge trap memory device having a high dielectric constant blocking region4 Nov 2025US 12,464,780 B2Longitude Flash Memory Solutions Ltd.
- Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereof31 Dec 2024US 12,183,395 B2Infineon Technologies AG
- Staggered word line architecture for reduced disturb in 3-dimensional nor memory arrays23 Apr 2024US 11,968,837 B2Sunrise Memory Corporation
- Non-volatile memory and corresponding manufacturing method13 Aug 2026US 2026/0237437 A1STMicroelectronics International N. V.
- Semiconductor memory device26 Mar 2026US 2026/0088058 A1
- Metal hybrid charge storage structure for memory26 Mar 2026US 2026/0089961 A1Intel NDTM US LLC
- Memory array structures and methods of their fabrication28 Nov 2024US 2024/0395326 A1Micron Technology, Inc.
- Field Effect Transistor Constructions and Methods of Programming Field Effect Transistors to One Of At Least Three Different Programmed States14 Dec 2023US 2023/0402082 A1Micron Technology, Inc.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Memory using insulator traps313US 6,545,314 B2Micron Technology, Inc. · 2003
- Use of high-k dielectric materials in modified ONO structure for semiconductor devices257US 6,674,138 B1Advanced Micro Devices, Inc. · 2004
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010
- Semiconductor memory having both volatile and non-volatile functionality and method of operating217US 8,159,878 B2Zeno Semiconductor, Inc. · 2012