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US 2026/0089961 A1Published application
Metal hybrid charge storage structure for memory
AssigneeIntel NDTM US LLC
InventorsGuangyu HUANG, Dipanjan Basu, Qun Gao, Randy Koval, Meng-Wei Kuo, Jie Ll, Guanjie LI, Henok Mebrahtu, Fei Wang, Minsheng Wang, Xingui Zhang
Life of this patent
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Abstract
Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.
Claims20
A memory device, comprising:
- a control gate;
- a conductive channel;
- and
- a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure is coupled to the control gate via two dielectric layers, a first dielectric layer of the two dielectric layers separates the charge storage structure from the conductive channel, and a second dielectric layer of the two dielectric layers partially wraps around the charge storage structure via a plurality of sides of the charge storage structure.
1 more element
A computing system, comprising:
- a circuit board;
- a processor coupled to the circuit board;
- and
- a memory device coupled to the circuit board, wherein the memory device further includes:
- a control gate,
- a conductive channel, and
- a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure is coupled to the control gate via two dielectric layers, a first dielectric layer of the two dielectric layers separates the charge storage structure from the conductive channel, and a second dielectric layer of the two dielectric layers partially wraps around the charge storage structure via a plurality of sides of the charge storage structure.
4 more elements
A method for providing a memory device, comprising:
- providing a control gate,
- providing a conductive channel, and
- providing a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure is coupled to the control gate via two dielectric layers, a first dielectric layer of the two dielectric layers separates the charge storage structure from the conductive channel, and a second dielectric layer of the two dielectric layers partially wraps around the charge storage structure via a plurality of sides of the charge storage structure.
Dependencies are inferred from the claim text.