Field Effect Transistor Constructions and Methods of Programming Field Effect Transistors to One Of At Least Three Different Programmed States

A method of programming a ferroelectric field effect transistor to one of at least three available different programmed states characterized by different Vt relative one another;

• the transistor comprising a semiconductive channel core, ferroelectric material proximate a periphery of the channel core, and a gate proximate a periphery of the ferroelectric material;
• the method comprising:
• applying a programming voltage to the gate that reverses polarization direction within the ferroelectric material at some circumferential location and not at another circumferential location to change Vt of the transistor from what it was prior to said applying.

A method of programming a ferroelectric field effect transistor to one of at least four available different programmed states characterized by different Vt relative one another;

• the transistor comprising a semiconductive channel core having at least four radially outermost surfaces that are straight along at least a majority of their respective circumferential lengths, ferroelectric material proximate the outermost surfaces, and a gate proximate a periphery of the ferroelectric material;
• the method comprising:
• applying a programming voltage to the gate that reverses polarization direction within the ferroelectric material that is over a first two of diametrically opposed of the at least four surfaces but not reversing polarization direction within the ferroelectric material that is over a second two of diametrically opposed of the at least four surfaces.

A method of programming a field effect transistor to one of at least three available different programmed states characterized by different Vt relative one another;

• the transistor comprising a semiconductive channel core, tunnel dielectric proximate a periphery of the channel core, charge trapping material proximate a periphery of the tunnel dielectric, outer dielectric proximate a periphery of the charge trapping material, and conductive control gate material proximate a periphery of the outer dielectric;
• the method comprising:
• applying a programming voltage to the control gate that injects different quanta of electrons into the charge trapping material at different circumferential locations to change Vt of the transistor from what it was prior to said applying.