Synaptic element for performing polynomial operation and electronic circuit including the same
AssigneeElectronics and Telecommunications Research Institute
InventorsJungWook Lim, Jieun Kim
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AssigneeElectronics and Telecommunications Research Institute
InventorsJungWook Lim, Jieun Kim
Estimating the term…
A synaptic element performing a multi-level logic operation includes a gate electrode to which a gate voltage pulse is applied, a first electrode, a second electrode, and a multilayer tunnel insulating film in contact with each of the gate electrode, the first electrode, and the second electrode, and disposed such that the gate electrode is spaced apart from the first electrode and the second electrode, and the synaptic element generates a tunneling current flowing from the first electrode to the gate electrode through the multilayer tunnel insulating film based on the gate voltage pulse, the synaptic element operates in one of a turn-on mode, a turn-off mode, and an intermediate mode different from the turn-on mode and the turn-off mode based on the tunneling current, and the synaptic element is trained to generate a drain current in each of the turn-on mode, the turn-off mode, and the intermediate mode.
A synaptic element which performs a multi-level logic operation, the synaptic element comprising:
An electronic circuit comprising:
Dependencies are inferred from the claim text.