H10D 30/694
Characterised by the shapes, relative sizes or dispositions of the gate electrodes
Official title: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
H10D30/694 (Characterised by the shapes, relative sizes or dispositions of the gate electrodes) appears on 2,046 US grants and 2,377 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,046
- Published applications
- 2,377
- Assignees
- 249
- Inventors
- 2,424
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 7 |
| 2004 | 4 | 10 |
| 2005 | 11 | 26 |
| 2006 | 18 | 47 |
| 2007 | 28 | 115 |
| 2008 | 49 | 132 |
| 2009 | 64 | 133 |
| 2010 | 84 | 117 |
| 2011 | 100 | 94 |
| 2012 | 100 | 88 |
| 2013 | 93 | 87 |
| 2014 | 108 | 139 |
| 2015 | 133 | 162 |
| 2016 | 190 | 181 |
| 2017 | 154 | 133 |
| 2018 | 134 | 127 |
| 2019 | 141 | 173 |
| 2020 | 132 | 144 |
| 2021 | 130 | 129 |
| 2022 | 96 | 113 |
| 2023 | 90 | 75 |
| 2024 | 84 | 60 |
| 2025 | 67 | 48 |
| 2026 | 36 | 36 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Staircase bridge structures for word line contacts in three-dimensional memory11 Aug 2026US 12,706,131 B2Yangtze Memory Technologies Co., Ltd.
- Vertical memory device and method of manufacturing the same28 Jul 2026US 12,696,452 B2Samsung Electronics Co., Ltd.
- Memory transistor with multiple charge storage layers21 Jul 2026US 12,690,238 B2Longitude Flash Memory Solutions Ltd.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic system including the same1 Oct 2026US 2026/0304759 A1Samsung Electronics Co., Ltd.
- Compact bitcell17 Sep 2026US 2026/0282364 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and method for manufacturing the same17 Sep 2026US 2026/0282365 A1Macronix International Co., Ltd.
Most cited
By later US patents
- Method of fabricating a charge-trapping gate stack using a CMOS process flow478US 8,993,457 B1Cypress Semiconductor Corporation · 2015
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014
- Atomic layer deposition method and semiconductor device formed by the same469US 8,158,512 B2Semiconductor Manufacturing International (Shanghai) Corporation · 2012
- Storage nitride encapsulation for non-planar sonos NAND flash charge retention395US 7,910,453 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2011
- Ultrahigh density monolithic, three dimensional vertical NAND memory device275US 8,349,681 B2SanDisk Technologies LLC · 2013