Vertical memory device and method of manufacturing the same

A vertical memory device, comprising:

• a memory channel structure disposed on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate;
• a division layer disposed on the substrate and contacting the memory channel structure;
• and
• a gate electrode structure contacting a sidewall of the memory channel structure and a sidewall of the division layer,
• wherein:
• the memory channel structure comprises:
• a filling pattern;
• a channel disposed on a sidewall of the filling pattern;
• and
• a charge storage structure disposed on an outer sidewall of the channel,
• the charge storage structure comprises a tunnel insulation pattern, a charge storage pattern and a blocking pattern sequentially stacked from the outer sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate,
• the division layer extends through a portion of the blocking pattern and contacts the charge storage pattern, and
• the charge storage pattern comprises an air gap including air at a portion of the charge storage pattern contacting the division layer.

A vertical memory device, comprising:

• a memory channel structure disposed on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate;
• a plurality of division layers disposed on the substrate and contacting the memory channel structure;
• and
• a gate electrode structure contacting a sidewall of the memory channel structure and sidewalls of the plurality of division layers,
• wherein:
• the memory channel structure comprises:
• a filling pattern;
• a channel disposed on a sidewall of the filling pattern;
• and
• a charge storage structure disposed on an outer sidewall of the channel,
• the charge storage structure comprises a tunnel insulation pattern, a charge storage pattern and a blocking pattern sequentially stacked from the outer sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate,
• each of the plurality of division layers extends through a portion of the blocking pattern, and the blocking pattern is divided into two parts by the plurality of division layers, and
• each of the plurality of division layers has a shape selected from the group consisting of a circle and an ellipse in a plan view.