Semiconductor device and method for manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsChih-Chieh LIN, Pei-Ying DU
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first well, two first source/drain regions, a first gate dielectric layer and a first gate. The first well is disposed in the substrate. The two first source/drain regions are disposed in the first well and are separated from each other. The first gate dielectric layer is disposed on the substrate. The first gate dielectric layer is a multi-layered structure. The first gate is disposed on the first gate dielectric layer. At least a portion of the first gate dielectric layer covers the two source/drain regions.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first well disposed in the substrate;
- two first source/drain regions disposed in the first well and separated from each other;
- a first gate dielectric layer disposed on the substrate, wherein the first gate dielectric layer is a multi-layered structure;
- and
- a first gate is disposed on the first gate dielectric layer, wherein at least one portion of the first gate dielectric layer covers the two first source/drain regions.
A method of manufacturing a semiconductor device, including:
- providing a substrate;
- forming a first well disposed in the substrate;
- forming two first source/drain regions disposed in the first well and separated from each other;
- forming a first gate dielectric layer disposed on the substrate, wherein the first gate dielectric layer is a multi-layered structure;
- and
- forming a first gate disposed on the first gate dielectric layer, wherein at least one portion of the first gate dielectric layer covers the two first source/drain regions.
Dependencies are inferred from the claim text.