H10D 30/699
Having the gate at least partly formed in a trench
Official title: {having the gate at least partly formed in a trench}
H10D30/699 (Having the gate at least partly formed in a trench) appears on 184 US grants and 213 published applications in this corpus.
Search patents in H10D- Granted patents
- 184
- Published applications
- 213
- Assignees
- 65
- Inventors
- 375
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 1 |
| 2004 | 0 | 2 |
| 2005 | 2 | 4 |
| 2006 | 3 | 7 |
| 2007 | 9 | 21 |
| 2008 | 9 | 25 |
| 2009 | 5 | 12 |
| 2010 | 20 | 15 |
| 2011 | 12 | 11 |
| 2012 | 10 | 13 |
| 2013 | 10 | 5 |
| 2014 | 9 | 6 |
| 2015 | 11 | 9 |
| 2016 | 9 | 11 |
| 2017 | 12 | 11 |
| 2018 | 7 | 4 |
| 2019 | 4 | 7 |
| 2020 | 11 | 11 |
| 2021 | 8 | 9 |
| 2022 | 7 | 9 |
| 2023 | 10 | 10 |
| 2024 | 6 | 3 |
| 2025 | 8 | 5 |
| 2026 | 2 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Non-volatile memory and corresponding manufacturing method7 Apr 2026US 12,597,471 B2
- Method of forming top select gate trenches20 Jan 2026US 12,532,513 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor device including first and second transistor channels28 Oct 2025US 12,456,676 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Trench gate high voltage transistor for embedded memory21 Oct 2025US 12,453,096 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods for manufacturing the same, and NAND memory devices14 Oct 2025US 12,446,265 B2Yangtze Memory Technologies Co., Ltd.
- Non-volatile memory and corresponding manufacturing method13 Aug 2026US 2026/0237437 A1STMicroelectronics International N. V.
- Semiconductor device and method of making19 Feb 2026US 2026/0052972 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including insulation gate-type transistors11 Dec 2025US 2025/0380451 A1Rohm Co., Ltd.
- Trench gate high voltage transistor for embedded memory27 Nov 2025US 2025/0365964 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated chip with a gate structure disposed within a trench8 May 2025US 2025/0151277 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and method of manufacturing semiconductor device95US 8,378,341 B2Renesas Electronics Corporation · 2013
- Semiconductor device and method of manufacturing semiconductor device47US 9,129,937 B2Renesas Electronics Corporation · 2015
- Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof45US 9,455,267 B2SanDisk Technologies LLC · 2016
- Three-dimensional semiconductor memory device and method of fabricating the same39US 8,383,482 B2Samsung Electronics Co., Ltd. · 2013
- Nonvolatile memory having modified channel region interface35US 7,646,637 B2Macronix International Co., Ltd. · 2010