Back to results
US 12,456,676 B2Granted
Semiconductor device including first and second transistor channels
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGerben Doornbos, Mauricio Manfrini
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided. The semiconductor device includes a memory structure including a first transistor channel, a gate structure overlying the first transistor channel, and a second transistor channel overlying the gate structure. The gate structure includes a control gate.
Claims20
A semiconductor device, comprising:
- a memory structure, comprising:
- a first transistor channel;
- a gate structure, comprising a control gate, overlying the first transistor channel;
- and
- a second transistor channel overlying the gate structure, wherein the control gate is configured to control the first transistor channel and the second transistor channel.
2 more elements
A semiconductor device, comprising:
- a first gate structure having a longest dimension extending in a first direction;
- a first transistor channel overlying the first gate structure and having a longest dimension extending in a second direction different than the first direction;
- a second gate structure overlying the first transistor channel and having a longest dimension extending in the first direction, wherein the second gate structure is offset from the first gate structure in the second direction such that the second gate structure does not overlie the first gate structure;
- and
- a second transistor channel overlying the second gate structure, the first transistor channel, and the first gate structure and having a longest dimension extending in the second direction.
2 more elements
A semiconductor device, comprising:
- a memory structure, comprising:
- a first transistor channel;
- a gate structure, comprising a control gate, overlying the first transistor channel;
- and
- a second transistor channel overlying the gate structure, wherein:
- a first portion of the gate structure and at least a portion of the first transistor channel form a first memory cell of the memory structure;
- and
- a second portion of the gate structure and at least a portion of the second transistor channel form a second memory cell of the memory structure.
5 more elements
Dependencies are inferred from the claim text.