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US 2026/0052972 A1Published application
Semiconductor device and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGerben Doornbos, Mauricio Manfrini
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a memory structure including a first transistor channel, a gate structure overlying the first transistor channel, and a second transistor channel overlying the gate structure. The gate structure includes a control gate.
Claims20
A method for forming a semiconductor device, comprising:
- forming a first transistor channel;
- forming a first gate structure, comprising a control gate, in contact with the first transistor channel, wherein the first gate structure overlies the first transistor channel;
- and
- forming a second transistor channel in contact with the first gate structure, wherein the second transistor channel overlies the first gate structure.
1 more element
A method for forming a semiconductor device, comprising:
- forming a first gate structure having a longest dimension extending in a first direction;
- forming a first transistor channel overlying the first gate structure and having a longest dimension extending in a second direction different than the first direction;
- and
- forming a second gate structure overlying the first transistor channel and having a longest dimension extending in the first direction, wherein forming the second gate structure comprises:
- forming the second gate structure to be offset from the first gate structure in the second direction such that the second gate structure does not overlie the first gate structure.
2 more elements
A method for forming a semiconductor device, comprising:
- forming a first transistor channel having a longest dimension extending in a first direction;
- forming a first gate structure overlying the first transistor channel and having a longest dimension extending in a second direction;
- and
- forming a second transistor channel overlying the first gate structure and having a longest dimension extending in the first direction, wherein the longest dimension of the first transistor channel is greater than the longest dimension of the second transistor channel.
1 more element
Dependencies are inferred from the claim text.