Semiconductor device and method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYoshihiro Hayashi, Naoya Inoue, Kishou Kaneko
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Abstract
A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate;
- a first interconnect layer formed over the semiconductor substrate;
- a gate electrode formed in the first interconnect layer;
- a gate insulating film formed over the gate electrode;
- a second interconnect layer formed over the gate insulating film;
- an oxide semiconductor layer formed in the second interconnect layer;
- and
- a via formed in the second interconnect layer and connected to the oxide semiconductor layer;
- wherein the gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view;
- wherein said oxide semiconductor layer includes a channel region formed in said oxide semiconductor layer;
- wherein a trapping film is positioned over said oxide semiconductor layer;
- and
- wherein a back-gate electrode is positioned over said trapping film, and overlaps with said channel region in a plan view.
Dependencies are inferred from the claim text.