Semiconductor device and method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYoshihiro Hayashi, Naoya Inoue, Kishou Kaneko
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Abstract
A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor element has a semiconductor layer, a gate insulating film, and a gate electrode; the semiconductor layer is positioned over the first interconnect layer; the gate insulating film is positioned over or below semiconductor layer; and the gate electrode is positioned on the opposite side of the semiconductor layer while placing the gate insulating film in between.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a first interconnect layer which includes an insulating layer formed over said semiconductor substrate, and a first interconnect filled in a surficial portion of said insulating layer;
- a semiconductor layer positioned over said first interconnect layer;
- a gate insulating film positioned over or below said semiconductor layer;
- and
- a gate electrode positioned on the opposite side of said semiconductor layer while placing said gate insulating film in between,
- wherein said gate insulating film is positioned over said first interconnect layer, and between said semiconductor layer and said first interconnect layer, and
- wherein said gate electrode is formed in the same layer with said first interconnect.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of interconnect layers, each of said interconnect layers includes an insulating layer and an interconnect;
- a semiconductor element formed on said semiconductor substrate;
- and
- a switching element comprising an oxide semiconductor layer positioned in said plurality of interconnect layers, said switching element controlled by said semiconductor element,
- wherein a gate insulating film and a gate electrode are positioned over said oxide semiconductor layer.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of interconnect layers, each of said interconnect layers includes an insulating layer and an interconnect;
- a semiconductor element formed on said semiconductor substrate;
- a switching element comprising an oxide semiconductor layer positioned in said plurality of interconnect layers, said switching element controlled by said semiconductor element;
- and
- an interconnect arranged in an upper layer of said switching element,
- wherein said switching element includes a gate electrode formed by Cu or Cu alloy, and said interconnect is formed by Al or Al alloy.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of interconnect layers, each of said interconnect layers includes an insulating layer and an interconnect;
- a semiconductor element formed on said semiconductor substrate;
- a switching element comprising an oxide semiconductor layer positioned in said plurality of interconnect layers, said switching element controlled by said semiconductor element;
- an interconnect and a via arranged in an upper layer of said switching element, said interconnect formed on said via, and said via overlaps with said oxide semiconductor layer;
- and
- a barrier layer formed on said oxide semiconductor layer, said barrier layer comprising at least one of a Ru layer, a MoN layer, and a W layer,
- wherein said via connects said oxide semiconductor layer through said barrier layer.
A method of manufacturing a semiconductor device comprising:
- forming, over a semiconductor substrate, a first interconnect layer which includes an insulating layer, and a gate electrode formed by a first interconnect filled in a surficial portion of said insulating layer, said first interconnect comprises a metal interconnect;
- forming, over said first interconnect layer, a gate insulating film which is positioned over said first interconnect;
- forming an oxide semiconductor layer over said gate insulating film;
- forming source-and-drain regions in said oxide semiconductor layer;
- and
- forming a second interconnect layer on said oxide semiconductor layer.
A method of manufacturing a semiconductor device comprising:
- forming, over a semiconductor substrate, a first interconnect layer which includes an insulating layer, and a first metal interconnect filled in a surficial portion of said insulating layer;
- forming an insulating film over said first interconnect layer;
- forming an oxide semiconductor layer over said insulating film;
- forming a gate insulating film over said oxide semiconductor layer;
- forming a gate electrode over said gate insulating film;
- forming source-and-drain regions in said oxide semiconductor layer;
- and
- forming a second interconnect layer over said oxide semiconductor layer.
Dependencies are inferred from the claim text.