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US 7,646,637 B2Granted
Nonvolatile memory having modified channel region interface
AssigneeMacronix International Co., Ltd.
InventorYi Ying Liao
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory with a modified channel region interface, such as a raised source and drain or a recessed channel region is included.
Claims18
A nonvolatile memory cell integrated circuit, comprising:
- a charge trapping structure storing charge to control a logical state stored by the nonvolatile memory cell integrated circuit;
- source and drain regions separated by a channel region;
- and
- one or more dielectric structures at least partly between the charge trapping structure and the channel region and at least partly between the charge trapping structure and a source of gate voltage,
- wherein an interface separates part of the one or more dielectric structures from the channel region, and a first end of the interface ends at an intermediate part of the source region and a second end of the interface ends at an intermediate part of the drain region.
2 more elements
A nonvolatile memory cell integrated circuit, comprising:
- a nanocrystal structure storing charge to control a logical state stored by the nonvolatile memory cell integrated circuit;
- source and drain regions separated by a channel region;
- and
- one or more dielectric structures at least partly between the nanocrystal structure and the channel region and at least partly between the nanocrystal structure and a source of gate voltage,
- wherein an interface separates part of the one or more dielectric structures from the channel region, and a first end of the interface ends at an intermediate part of the source region and a second end of the interface ends at an intermediate part of the drain region.
2 more elements
Dependencies are inferred from the claim text.