H10D 30/697
Having trapping at multiple separated sites
Official title: {having trapping at multiple separated sites, e.g. multi-particles trapping sites}
H10D30/697 (Having trapping at multiple separated sites) appears on 277 US grants and 327 published applications in this corpus.
Search patents in H10D- Granted patents
- 277
- Published applications
- 327
- Assignees
- 89
- Inventors
- 510
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 1 |
| 2004 | 1 | 3 |
| 2005 | 4 | 7 |
| 2006 | 4 | 10 |
| 2007 | 9 | 26 |
| 2008 | 7 | 33 |
| 2009 | 23 | 34 |
| 2010 | 13 | 20 |
| 2011 | 22 | 18 |
| 2012 | 23 | 13 |
| 2013 | 16 | 17 |
| 2014 | 19 | 16 |
| 2015 | 15 | 17 |
| 2016 | 24 | 26 |
| 2017 | 19 | 11 |
| 2018 | 18 | 10 |
| 2019 | 11 | 18 |
| 2020 | 9 | 10 |
| 2021 | 16 | 10 |
| 2022 | 5 | 5 |
| 2023 | 6 | 5 |
| 2024 | 3 | 8 |
| 2025 | 5 | 4 |
| 2026 | 5 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Memory device and method of forming the same28 May 2026US 2026/0150288 A1Yangtze Memory Technologies Co., Ltd.
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Most cited
By later US patents
- Atomic layer deposition method and semiconductor device formed by the same469US 8,158,512 B2Semiconductor Manufacturing International (Shanghai) Corporation · 2012
- Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle265US 7,759,715 B2Micron Technology, Inc. · 2010
- Non-volatile semiconductor storage device262US 8,008,710 B2Kabushiki Kaisha Toshiba · 2011
- Reference line and bit line structure for 3D memory163US 9,412,752 B1Macronix International Co., Ltd. · 2016
- Asymmetric band-gap engineered nonvolatile memory device107US 6,784,480 B2Micron Technology, Inc. · 2004