Three-dimensional memory device and fabrication method for improved yield and reliability
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKun Zhang, Wenxi Zhou, Linchun Wu, Yuhui Han, Changzhi Sun, Zhiliang Xia, Zongliang Huo
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Abstract
A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, channel hole structures in a first region of memory cells in the conductor/insulator stack, a blocking structure adjacent to the first region, and a dummy channel hole structure in the first region. The dummy channel hole structure is adjacent to the blocking structure, and includes a dielectric material that fills a channel hole to form a first dielectric filling structure.
Claims14
A three-dimensional (3D) memory device, comprising:
- a conductor/insulator stack including a conductive layer and a dielectric layer alternatingly stacked;
- a plurality of channel hole structures in a first region of memory cells in the conductor/insulator stack;
- a gate line slit (GLS) structure adjacent to the first region, through the conductor/insulator stack, and extending along a first direction;
- a blocking structure adjacent to the first region, through the conductor/insulator stack, and extending along a second direction, the first and second directions being perpendicular;
- and
- a first dummy channel hole structure in the first region, the first dummy channel hole structure extending through the conductor/insulator stack, being adjacent to the blocking structure, and including one or more dielectric materials that fill a channel hole to form a first dielectric filling structure.
A three-dimensional (3D) memory device, comprising:
- a conductor/insulator stack including a conductive layer and a dielectric layer alternatingly stacked;
- a plurality of channel hole structures in a first region of memory cells in the conductor/insulator stack;
- a gate line slit (GLS) structure adjacent to the first region and extending along a first direction;
- a blocking structure separating the first region and a second region and extending along a second direction, the first and second directions being perpendicular;
- and
- a first dummy channel hole structure in the first region, the first dummy channel hole structure including one or more dielectric materials that fill a channel hole to form a first dielectric filling structure.
Dependencies are inferred from the claim text.