Charge storage type tunneling transistor device, manufacturing method thereof, and boolean logic operation method
AssigneeSeoul National University R&Db Foundation
InventorsWoo Young CHOI, Chang Heon PARK, Jae Seung WOO, Jang Woo LEE
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Abstract
A charge storage type tunneling transistor device, includes a semiconductor substrate, a gate formed on the semiconductor substrate, a source region and a drain region spaced apart from each other via a channel region that is formed under the gate, a dielectric layer formed between the gate and the channel region, and first and second charge storage layers buried in the dielectric layer to be spaced apart from each other, and independently storing charge.
Claims20
A charge storage type tunneling transistor device comprising:
- a semiconductor substrate;
- a gate formed on the semiconductor substrate;
- a source region and a drain region spaced apart from each other via a channel region that is formed under the gate;
- a dielectric layer formed between the gate and the channel region;
- and
- first and second charge storage layers buried in the dielectric layer to be spaced apart from each other, and independently storing charge.
A method of manufacturing a charge storage type tunneling transistor device comprising:
- forming a dielectric layer and a gate layer over a semiconductor substrate;
- forming a source region, a drain region, and a channel region within the semiconductor substrate;
- forming an undercut-shaped space on both sides on a bottom of the gate layer by etching both sides of the dielectric layer;
- forming an oxide film on an entire surface including the dielectric layer through an oxidation process, and forming a charge storage layer along the entire surface to fill the space;
- and
- forming first and second charge storage layers buried in the dielectric layer to be spaced apart from each other by etching the oxide film and the charge storage layer.
A Boolean logic operation method of a charge storage type tunneling transistor device, the method comprising:
- step 1 of setting first and second charge storage layers to an initial state, the first and second charge storage layers being buried in a dielectric layer formed between a gate and a channel region to be spaced apart from each other and independently storing charge;
- step 2 of performing a Boolean logic operation by performing selective program or erase operation;
- and
- step 3 of performing a read operation on a result of the Boolean logic operation.
Dependencies are inferred from the claim text.