H10D 30/696
Having at least one additional gate
Official title: {having at least one additional gate, e.g. program gate, erase gate or select gate}
H10D30/696 (Having at least one additional gate) appears on 797 US grants and 901 published applications in this corpus.
Search patents in H10D- Granted patents
- 797
- Published applications
- 901
- Assignees
- 105
- Inventors
- 874
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 1 |
| 2004 | 0 | 2 |
| 2005 | 0 | 7 |
| 2006 | 8 | 13 |
| 2007 | 7 | 25 |
| 2008 | 11 | 20 |
| 2009 | 14 | 25 |
| 2010 | 18 | 33 |
| 2011 | 17 | 21 |
| 2012 | 23 | 18 |
| 2013 | 26 | 32 |
| 2014 | 32 | 49 |
| 2015 | 45 | 81 |
| 2016 | 90 | 89 |
| 2017 | 80 | 79 |
| 2018 | 70 | 62 |
| 2019 | 86 | 81 |
| 2020 | 54 | 60 |
| 2021 | 51 | 59 |
| 2022 | 43 | 44 |
| 2023 | 47 | 28 |
| 2024 | 30 | 30 |
| 2025 | 29 | 25 |
| 2026 | 16 | 17 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,720 B2Samsung Electronics Co., Ltd.
- Staircase bridge structures for word line contacts in three-dimensional memory11 Aug 2026US 12,706,131 B2Yangtze Memory Technologies Co., Ltd.
- Memory transistor with multiple charge storage layers21 Jul 2026US 12,690,238 B2Longitude Flash Memory Solutions Ltd.
- Flash memory with improved gate structure and a method of creating the same14 Jul 2026US 12,684,768 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Compact bitcell17 Sep 2026US 2026/0282364 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and method for manufacturing the same17 Sep 2026US 2026/0282365 A1Macronix International Co., Ltd.
- Non-volatile memory and corresponding manufacturing method13 Aug 2026US 2026/0237437 A1STMicroelectronics International N. V.
- Embedded memory device and method of fabricating the same13 Aug 2026US 2026/0239616 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014
- Dual-gate device and method256US 7,612,411 B22009
- Semiconductor memory device242US 7,609,551 B2Kabushiki Kaisha Toshiba · 2009
- Semiconductor device and method of manufacturing semiconductor device95US 8,378,341 B2Renesas Electronics Corporation · 2013
- Three-dimensional memory device having passive devices at a buried source line level and method of making thereof86US 9,876,031 B1SanDisk Technologies LLC · 2018