Three-dimensional memory device having passive devices at a buried source line level and method of making thereof

A semiconductor structure comprising:

• a first layer stack located over a semiconductor substrate and including a patterned lower semiconductor layer, a patterned dielectric material layer, and a patterned upper semiconductor layer, wherein semiconductor line structures extend through openings in the patterned dielectric material layer;
• an alternating stack of insulating layers and electrically conductive layers overlying the first layer stack;
• memory stack structures extending through the alternating stack, the patterned upper semiconductor layer, and the dielectric material layer;
• and
• at least one passive device located at a same level as the first layer stack,
• wherein each of the at least one passive device comprises a respective second layer stack that includes:
• a lower semiconductor plate that is vertically spaced from the semiconductor substrate by a same distance as the patterned lower semiconductor layer is from the semiconductor substrate;
• a dielectric material plate contacting the lower semiconductor plate and vertically spaced from the semiconductor substrate by a same distance as the patterned dielectric material layer is from the semiconductor substrate;
• and
• an upper semiconductor plate contacting a top surface of the dielectric material plate;
• and wherein the at least one passive device comprises at least one of a resistor and a capacitor.