Back to results
US 2026/0282364 A1Published application
Compact bitcell
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYongshun Sun, Eng Huat Toh, Shyue Seng Tan
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to bitcell structures and methods of manufacture. The structure includes: a semiconductor substrate; a plurality of memory gates isolated from the semiconductor substrate by a stack of insulator materials; and a select gate embedded within the semiconductor substrate and shared with the plurality of memory gates.
Claims20
A structure comprising:
- a semiconductor substrate;
- a plurality of memory gates isolated from the semiconductor substrate by a stack of insulator materials;
- and
- a select gate embedded within the semiconductor substrate and shared with the plurality of memory gates.
1 more element
A structure comprising:
- a semiconductor substrate comprising diffusion regions;
- a plurality of memory gates between the diffusion regions and isolated from the semiconductor substrate by a stack of insulator materials;
- and
- a select gate shared amongst the plurality of memory gates and within the semiconductor substrate.
1 more element
A method comprises:
- forming a plurality of memory gates isolated from a semiconductor substrate by a stack of insulator materials;
- and
- forming a select gate embedded within the semiconductor substrate and shared with the plurality of memory gates.
Dependencies are inferred from the claim text.