Semiconductor device and electronic system including the same

A semiconductor device, comprising:

• a gate stacking structure including a plurality of air gap layers and a plurality of gate electrodes alternately stacked on each other;
• a channel structure passing through the gate stacking structure, wherein the channel structure includes a channel layer and a gate dielectric layer, wherein the gate dielectric layer includes a charge storage layer including a plurality of storage portions spaced apart from each other, wherein the plurality of storage portions correspond to the plurality of gate electrodes, respectively;
• and
• a gate contact passing through the gate stacking structure that includes the plurality of air gap layers and the plurality of gate electrodes, the gate contact being electrically connected to a connection gate electrode of the plurality of gate electrodes.

An electronic system, comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller electrically connected to the semiconductor device on the main substrate, wherein
• the semiconductor device includes a stacking structure and a channel structure,
• the stacking structure includes a sacrificial stacking structure and a gate stacking structure,
• the channel structure passes through the gate stacking structure,
• the channel structure includes a channel layer and a gate dielectric layer,
• the gate dielectric layer includes a charge storage layer including a plurality of storage portions spaced apart from each other,
• the sacrificial stacking structure includes a first interlayer sacrificial layer and a second interlayer sacrificial layer,
• the first interlayer sacrificial layer and the second interlayer sacrificial layer include different materials and are alternately stacked on each other,
• the gate stacking structure includes an air gap layer and a gate structure,
• in a thickness direction of the stacking structure, the air gap layer corresponds to at least a portion of the first interlayer sacrificial layer and the gate structure corresponds to at least the second interlayer sacrificial layer,
• the gate structure includes a gate electrode and a cover insulation layer,
• the cover insulation layer is on the gate electrode and is adjacent to the air gap layer,
• the cover insulation layer includes a first cover portion extending in a horizontal direction on the gate electrode, and
• wherein the gate electrode and at least a portion of the first cover portion of the cover insulation layer is disposed to correspond to or overlap the second interlayer sacrificial layer in the thickness direction of the stacking structure.