H10D 30/693
Vertical igfets having charge trapping gate insulators
Official title: {Vertical IGFETs having charge trapping gate insulators}
H10D30/693 (Vertical igfets having charge trapping gate insulators) appears on 1,572 US grants and 1,848 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,572
- Published applications
- 1,848
- Assignees
- 149
- Inventors
- 1,812
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 2 | 0 |
| 2002 | 2 | 3 |
| 2003 | 2 | 3 |
| 2004 | 3 | 12 |
| 2005 | 9 | 15 |
| 2006 | 11 | 19 |
| 2007 | 14 | 24 |
| 2008 | 15 | 27 |
| 2009 | 11 | 27 |
| 2010 | 20 | 54 |
| 2011 | 33 | 87 |
| 2012 | 62 | 119 |
| 2013 | 107 | 140 |
| 2014 | 167 | 188 |
| 2015 | 179 | 170 |
| 2016 | 163 | 106 |
| 2017 | 101 | 80 |
| 2018 | 87 | 86 |
| 2019 | 88 | 101 |
| 2020 | 109 | 133 |
| 2021 | 90 | 100 |
| 2022 | 82 | 85 |
| 2023 | 78 | 70 |
| 2024 | 56 | 56 |
| 2025 | 52 | 62 |
| 2026 | 29 | 81 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Microelectronic devices, and related methods and memory devices8 Oct 2026US 2026/0313897 A1Micron Technology, Inc.
- Semiconductor device and method of manufacturing the same8 Oct 2026US 2026/0313899 A1SK hynix Inc.
- Method for Forming a Memory Structure for a 3D NAND Flash Memory8 Oct 2026US 2026/0313939 A1
- Semiconductor devices having through-insulating structures and data storage systems including the same8 Oct 2026US 2026/0314382 A1Samsung Electronics Co., Ltd.
- Semiconductor device including laser beam absorption enhancement structures and methods for forming the same1 Oct 2026US 2026/0304792 A1SanDisk Technologies LLC
Most cited
By later US patents
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Integrated circuits having a contact region and methods for manufacturing the same490US 7,915,667 B2Qimonda AG · 2011
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Ultrahigh density vertical NAND memory device and method of making thereof296US 8,187,936 B2SanDisk Technologies LLC · 2012