Electronic devices comprising pillars extending through a semiconductor material and adjacent to a source implant region, and related electronic systems and methods

An electronic device, comprising:

• a source stack comprising one or more conductive materials;
• a source implant region in the source stack;
• a source contact adjacent to the source stack;
• a doped semiconductive material adjacent to the source contact;
• tiers of alternating conductive materials and dielectric materials adjacent to the doped semiconductive material;
• pillars extending through the tiers of alternating conductive materials and dielectric materials and into the source stack;
• and
• a fill material laterally adjacent to the pillars and extending through the tiers of alternating conductive materials and dielectric materials and into the source contact, the fill material laterally adjacent to the source contact exhibiting a smaller width in a lateral direction than a width of the source implant region in the lateral direction, and a lower surface of the fill material vertically adjacent to the source implant region.

A method of forming an electronic device, the method comprising:

• forming a source implant region within a first doped semiconductor material of a source stack, the source stack comprising one or more conductive materials;
• forming a source contact sacrificial structure adjacent to the source implant region;
• forming a second doped semiconductive material adjacent to the source contact sacrificial structure;
• forming tiers adjacent to the second doped semiconductive material, the tiers comprising alternating dielectric materials and nitride materials;
• forming pillars through the tiers, the second doped semiconductive material and into the source stack, the pillars including a channel, a charge blocking material, and a charge trap material, the source implant region laterally adjacent to the pillars and within a top portion of the source stack;
• forming a slit through the tiers to expose the source contact sacrificial structure;
• removing a portion of the source contact sacrificial structure to form a source contact opening, the source contact opening defined by sidewalls of the source contact sacrificial structure and the sidewalls comprising a non-linear profile;
• forming a source contact in the source contact opening and the slit, the source contact adjacent to the source stack and the second doped semiconductive material adjacent to the source contact and sidewalls of the source contact vertically adjacent to the source implant region;
• removing a portion of the source contact to form a source contact opening above the source implant region;
• forming a liner on sidewalls of the source contact and on sidewalls of the second doped semiconductive material;
• and
• replacing the nitride materials in the tiers with conductive materials to form tiers of alternating conductive materials and dielectric materials adjacent to the second doped semiconductive material, the pillars extending through the tiers of alternating conductive materials and dielectric materials and into the source stack;
• and
• forming a fill material in the slit and over the source implant region, the fill material laterally adjacent to the pillars and extending through the tiers of alternating conductive materials and dielectric materials, the second doped semiconductive material, and into the source contact, wherein a width of the fill material laterally adjacent to a top of the doped semiconductive material is wider than a width of the fill material laterally adjacent to a bottom of the tiers of alternating conductive materials and dielectric materials.

An electronic system, comprising:

• an input device;
• an output device;
• a processor device operably coupled to the input device and to the output device;
• and
• one or more memory devices operably coupled to the processor device, the one or more memory devices comprising:
• a source contact adjacent to a source stack;
• a source implant region in the source stack, sidewalls of the source contact above the source implant region;
• a semiconductive material vertically adjacent to the source contact, lower surfaces of the semiconductive material being coplanar;
• tiers of alternating conductive materials and dielectric materials adjacent to the semiconductive material;
• a fill material overlying the source implant region and extending through the source contact, the semiconductive material, and the tiers of alternating conductive materials and dielectric materials;
• a liner interposed between the fill material and the semiconductive material, between the fill material and the source contact, and between the fill material and the source implant region;
• and
• memory pillars extending through the tiers of alternating conductive materials and dielectric materials, the semiconductive material, the source contact, and partially into the source stack.