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US 12,684,772 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Seung Jun Lee
Life of this patent
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Abstract
A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.
Claims15
A semiconductor device, comprising:
- a stacked structure including conductive layers and insulating layers stacked alternately with the conductive layers in a vertical direction;
- a plurality of first semiconductor patterns formed through the stacked structure;
- a plurality of second semiconductor patterns formed through the stacked structure and spaced apart from the plurality of first semiconductor patterns in a first direction;
- coupling patterns overlapping the stacked structure;
- and
- a first slit located between the coupling patterns at a level where the coupling patterns are arranged, the first slit extending in a second direction crossing the first direction,
- wherein the first slit extends to pass through the stacked structure between the plurality of first semiconductor patterns and the plurality of second semiconductor patterns,
- wherein each of the coupling patterns extends to couple the plurality of first semiconductor patterns to each other in the second direction or to couple the plurality of second semiconductor patterns to each other in the second direction, and
- wherein the vertical direction crosses the first direction and the second direction.
6 more elements
A semiconductor device, comprising:
- a first stack including first conductive layers and first insulating layers that are alternately stacked;
- a second stack including second conductive layers and second insulating layers that are alternately stacked and adjacent to the first stack in a first direction;
- a first coupling pattern under the first stack and extending in a second direction crossing the first direction;
- a second coupling pattern under the second stack, wherein the second coupling pattern is adjacent to the first coupling pattern in the first direction and extends in the second direction;
- first semiconductor patterns extending through the first stack;
- second semiconductor patterns extending through the second stack;
- and
- a slit insulating layer disposed between the first coupling pattern and the second coupling pattern and between the first stack and the second stack,
- wherein the first coupling pattern is coupled to at least two of the first rows of the first semiconductor patterns, and
- wherein each of the first rows includes first semiconductor patterns arranged in the second direction.
7 more elements
Dependencies are inferred from the claim text.