Back to results
US 12,720,740 B2Granted
Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same
AssigneeIucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
InventorsYun Heub Song, Sun Jun Choi
Life of this patent
Estimating the term…
Abstract
Disclosed are a three-dimensional flash memory, which reduces leakage current and supports a hole injection erase technique, and a method for manufacturing same. According to an embodiment, the three-dimensional flash memory comprises: a substrate; a channel layer extending in one direction on the substrate and having the shape of a hollow macaroni; and a P-type filer extending in the one direction while filling the inner space of the channel layer.
Claims1
A method of manufacturing a three-dimensional (3D) flash memory, the method comprising:
- forming a channel layer having a shape of a hollow macaroni on a substrate so as to be extended in one direction;
- forming a nitride layer having a shape of a hollow macaroni in an inner space of the channel layer so as to be extended in the one direction;
- and
- forming a P-type filer in an inner space of the nitride layer and in contact with the substrate so as to be extended in the one direction,
- wherein the forming of the nitride layer includes:
- forming the nitride layer for blocking a leakage current of the P-type filer so as to be extended in the one direction,
- wherein a thickness of the nitride layer is determined as a value that allows a hole to move between the P-type filer and the channel layer by trap assist tunneling (TAT) of the nitride layer.
4 more elements
Dependencies are inferred from the claim text.