H10D 30/64
Double-diffused metal-oxide semiconductor [dmos] fets
Official title: Double-diffused metal-oxide semiconductor [DMOS] FETs
H10D30/64 (Double-diffused metal-oxide semiconductor [dmos] fets) appears on 12,613 US grants and 14,418 published applications in this corpus.
Search patents in H10D- Granted patents
- 12,613
- Published applications
- 14,418
- Assignees
- 1,147
- Inventors
- 9,937
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 9 | 0 |
| 1978 | 8 | 0 |
| 1979 | 6 | 0 |
| 1980 | 7 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 16 | 0 |
| 1984 | 8 | 0 |
| 1985 | 18 | 0 |
| 1986 | 38 | 0 |
| 1987 | 26 | 0 |
| 1988 | 20 | 0 |
| 1989 | 32 | 0 |
| 1990 | 49 | 0 |
| 1991 | 47 | 0 |
| 1992 | 43 | 0 |
| 1993 | 45 | 0 |
| 1994 | 66 | 0 |
| 1995 | 100 | 0 |
| 1996 | 80 | 0 |
| 1997 | 84 | 0 |
| 1998 | 126 | 0 |
| 1999 | 136 | 0 |
| 2000 | 140 | 0 |
| 2001 | 147 | 86 |
| 2002 | 163 | 223 |
| 2003 | 221 | 242 |
| 2004 | 243 | 285 |
| 2005 | 231 | 299 |
| 2006 | 185 | 341 |
| 2007 | 187 | 325 |
| 2008 | 209 | 374 |
| 2009 | 251 | 433 |
| 2010 | 361 | 439 |
| 2011 | 412 | 482 |
| 2012 | 392 | 583 |
| 2013 | 517 | 617 |
| 2014 | 659 | 761 |
| 2015 | 752 | 831 |
| 2016 | 745 | 821 |
| 2017 | 777 | 771 |
| 2018 | 687 | 715 |
| 2019 | 730 | 725 |
| 2020 | 665 | 699 |
| 2021 | 578 | 627 |
| 2022 | 528 | 773 |
| 2023 | 460 | 770 |
| 2024 | 463 | 761 |
| 2025 | 522 | 777 |
| 2026 | 410 | 658 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- High voltage device structure and methods of forming the same6 Oct 2026US 12,757,436 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- High voltage device structure and methods of forming the same8 Oct 2026US 2026/0313953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Planar mosfet having asymmetric wells8 Oct 2026US 2026/0313954 A1Microchip Technology Incorporated
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997