H10D 30/66
Vertical dmos [vdmos] fets
Official title: Vertical DMOS [VDMOS] FETs
H10D30/66 (Vertical dmos [vdmos] fets) appears on 9,610 US grants and 11,069 published applications in this corpus.
Search patents in H10D- Granted patents
- 9,610
- Published applications
- 11,069
- Assignees
- 921
- Inventors
- 7,202
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 5 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 0 | 0 |
| 1982 | 4 | 0 |
| 1983 | 13 | 0 |
| 1984 | 6 | 0 |
| 1985 | 18 | 0 |
| 1986 | 28 | 0 |
| 1987 | 24 | 0 |
| 1988 | 17 | 0 |
| 1989 | 28 | 0 |
| 1990 | 43 | 0 |
| 1991 | 42 | 0 |
| 1992 | 40 | 0 |
| 1993 | 37 | 0 |
| 1994 | 54 | 0 |
| 1995 | 78 | 0 |
| 1996 | 63 | 0 |
| 1997 | 74 | 0 |
| 1998 | 94 | 0 |
| 1999 | 117 | 0 |
| 2000 | 122 | 0 |
| 2001 | 122 | 69 |
| 2002 | 129 | 176 |
| 2003 | 184 | 191 |
| 2004 | 185 | 222 |
| 2005 | 174 | 230 |
| 2006 | 147 | 256 |
| 2007 | 140 | 237 |
| 2008 | 152 | 299 |
| 2009 | 193 | 349 |
| 2010 | 285 | 348 |
| 2011 | 335 | 389 |
| 2012 | 308 | 472 |
| 2013 | 403 | 480 |
| 2014 | 501 | 545 |
| 2015 | 545 | 610 |
| 2016 | 539 | 619 |
| 2017 | 565 | 574 |
| 2018 | 514 | 545 |
| 2019 | 544 | 563 |
| 2020 | 497 | 521 |
| 2021 | 437 | 476 |
| 2022 | 397 | 587 |
| 2023 | 336 | 597 |
| 2024 | 336 | 606 |
| 2025 | 397 | 599 |
| 2026 | 326 | 509 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 30/668Having trench gate electrodes6,356
- H10D 30/665Having edge termination structures3,069
- H10D 30/663Having both source contacts and drain contacts on the same surface, i.e.594
- H10D 30/662Having a drift region having a doping concentration that is higher between369
- H10D 30/669Having voltage-sensing or current-sensing structures318
- H10D 30/664Inverted vdmos transistors, i.e. source-down vdmos transistors111
- H10D 30/667Having substrates comprising insulating layers78
Recent patents
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Planar mosfet having asymmetric wells8 Oct 2026US 2026/0313954 A1Microchip Technology Incorporated
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Field effect transistor8 Oct 2026US 2026/0313957 A1Denso Corporation
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997