H10D 30/665
Having edge termination structures
Official title: {having edge termination structures}
H10D30/665 (Having edge termination structures) appears on 3,069 US grants and 3,607 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,069
- Published applications
- 3,607
- Assignees
- 380
- Inventors
- 2,868
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 7 | 0 |
| 1994 | 10 | 0 |
| 1995 | 13 | 0 |
| 1996 | 11 | 0 |
| 1997 | 17 | 0 |
| 1998 | 20 | 0 |
| 1999 | 23 | 0 |
| 2000 | 28 | 0 |
| 2001 | 16 | 12 |
| 2002 | 30 | 45 |
| 2003 | 38 | 51 |
| 2004 | 51 | 60 |
| 2005 | 50 | 71 |
| 2006 | 49 | 95 |
| 2007 | 48 | 81 |
| 2008 | 54 | 126 |
| 2009 | 69 | 113 |
| 2010 | 114 | 134 |
| 2011 | 139 | 159 |
| 2012 | 123 | 169 |
| 2013 | 168 | 175 |
| 2014 | 184 | 192 |
| 2015 | 213 | 243 |
| 2016 | 225 | 240 |
| 2017 | 196 | 184 |
| 2018 | 188 | 174 |
| 2019 | 167 | 175 |
| 2020 | 142 | 162 |
| 2021 | 143 | 140 |
| 2022 | 111 | 147 |
| 2023 | 78 | 191 |
| 2024 | 93 | 153 |
| 2025 | 126 | 161 |
| 2026 | 88 | 154 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Semiconductor device22 Sep 2026US 12,745,433 B2Fuji Electric Co., Ltd.
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Silicon carbide semiconductor device and power converter15 Sep 2026US 12,740,094 B2Mitsubishi Electric Corporation
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Field effect transistor8 Oct 2026US 2026/0313957 A1Denso Corporation
- Semiconductor device1 Oct 2026US 2026/0304828 A1Rohm Co., Ltd.
- Power device and manufacturing method thereof1 Oct 2026US 2026/0304829 A1Chongqing Simic Semiconductor Limited
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry288US 5,072,266 ASiliconix Incorporated · 1991
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001