Semiconductor device

A semiconductor device comprising:

• a first conductive type semiconductor substrate;
• a cell region disposed on the semiconductor substrate and having a cell disposed therein;
• an outer peripheral region disposed on the semiconductor substrate and surrounding the cell region;
• a first conductive type first semiconductor layer disposed across both the cell region and the outer peripheral region on the semiconductor substrate;
• a first pn region disposed in the cell region, extending in a thickness direction of the semiconductor substrate, and formed of a first conductive type first column and a second conductive type second column that are alternately disposed in a first direction perpendicular to the thickness direction;
• a second conductive type second semiconductor layer positioned on the first pn region, extending in the first direction, and connected to the second column;
• a second pn region disposed in the outer peripheral region, extending in the thickness direction, and formed of a first conductive type third column and a second conductive type fourth column that are alternately disposed in the first direction;
• a first conductive type third semiconductor layer positioned on the second pn region, extending in the first direction, and connected to the third column;
• and
• an insulating layer disposed on the second semiconductor layer and the third semiconductor layer, wherein,
• in the second pn region, a plurality of the fourth columns are arranged to be spaced from each other in the first direction,
• the plurality of the fourth columns each have a fourth upper end and a fourth lower end as both ends in the thickness direction, and
• a second conductive type connection layer connecting the plurality of the fourth columns in an area excluding the fourth upper end is disposed in the second pn region.