H10D 30/663
Having both source contacts and drain contacts on the same surface, i.e.
Official title: {having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS}
H10D30/663 (Having both source contacts and drain contacts on the same surface, i.e.) appears on 594 US grants and 504 published applications in this corpus.
Search patents in H10D- Granted patents
- 594
- Published applications
- 504
- Assignees
- 161
- Inventors
- 794
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 7 | 0 |
| 1995 | 11 | 0 |
| 1996 | 13 | 0 |
| 1997 | 14 | 0 |
| 1998 | 10 | 0 |
| 1999 | 11 | 0 |
| 2000 | 14 | 0 |
| 2001 | 10 | 3 |
| 2002 | 11 | 11 |
| 2003 | 12 | 13 |
| 2004 | 15 | 16 |
| 2005 | 14 | 11 |
| 2006 | 9 | 16 |
| 2007 | 12 | 20 |
| 2008 | 8 | 37 |
| 2009 | 21 | 31 |
| 2010 | 26 | 21 |
| 2011 | 26 | 22 |
| 2012 | 26 | 21 |
| 2013 | 27 | 24 |
| 2014 | 34 | 31 |
| 2015 | 26 | 31 |
| 2016 | 28 | 36 |
| 2017 | 35 | 31 |
| 2018 | 32 | 27 |
| 2019 | 20 | 13 |
| 2020 | 17 | 23 |
| 2021 | 20 | 11 |
| 2022 | 12 | 18 |
| 2023 | 10 | 13 |
| 2024 | 10 | 12 |
| 2025 | 9 | 2 |
| 2026 | 6 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Wide band gap semiconductor device with surface insulating film22 Sep 2026US 12,745,445 B2Rohm Co., Ltd.
- Semiconductor device with voltage resistant structure1 Sep 2026US 12,727,212 B2Rohm Co., Ltd.
- Transistor cells including a deep via lined with a dielectric material26 May 2026US 12,642,069 B2Intel Corporation
- DMOS device having junction field plate and manufacturing method therefor5 May 2026US 12,622,009 B2Csmc Technologies Fab2 Co., Ltd.
- Semiconductor device23 Jul 2026US 2026/0214953 A1Nuvoton Technology Corporation Japan
- Power semiconductor device and method for manufacturing same11 Jun 2026US 2026/0164708 A1Silergy Semiconductor Technology (Hangzhou) LTD
- Semiconductor device and methods of formation21 May 2026US 2026/0143776 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Trench-type dmos device and manufacturing method therefor14 May 2026US 2026/0136589 A1Csmc Technologies Fab2 Co., Ltd.
- Semiconductor die with a vertical transistor device26 Mar 2026US 2026/0090086 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Area efficient high voltage Mosfets with vertical resurf drift regions203US 5,539,238 ATexas Instruments Incorporated · 1996
- Low resistance power MOSFET or other device containing silicon-germanium layer203US 6,239,463 B1Siliconix Incorporated · 2001
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000
- Monolithic class D amplifier170US 5,973,368 A1999