Power semiconductor device and method for manufacturing same
AssigneeSilergy Semiconductor Technology (Hangzhou) LTD
InventorsHui Yu, Jun Cai
Life of this patent
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Abstract
A power semiconductor device can include: a substrate, including an active region having a source region and a drain region each of a first doping type and extending from an upper surface of the substrate into an interior thereof; a gate trench, formed between the source region and the drain region and being recessed from the upper surface of the substrate to the active region; a main gate located in the gate trench, where the main gate extends downward from an upper surface of the gate trench; and an insulating layer, formed between an inner wall of the gate trench and the main gate.
Claims20
A power semiconductor device, comprising:
- a) a substrate, comprising an active region having a source region and a drain region each of a first doping type and extending from an upper surface of the substrate into an interior thereof;
- b) a gate trench, formed between the source region and the drain region and being recessed from the upper surface of the substrate to the active region;
- c) a main gate located in the gate trench, wherein the main gate extends downward from an upper surface of the gate trench;
- and
- d) an insulating layer, formed between an inner wall of the gate trench and the main gate.
A method of making a power semiconductor device, the method comprising:
- a) providing a substrate;
- b) forming an active region in the substrate;
- c) recessing an upper surface of the substrate to the active region to form a gate trench;
- d) filling the gate trench to form an insulating layer;
- e) forming a main gate in the insulating layer, wherein the main gate extends from an upper surface of the gate trench into an interior of the gate trench;
- and
- f) forming a source region and a drain region extending from an upper surface of the active region into its interior, wherein the gate trench is disposed between the source region and the drain region.
Dependencies are inferred from the claim text.