Trench power semiconductor device and method for manufacturing same
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Randy L. Yach, Bruce Odekirk
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Abstract
A trench power semiconductor device comprising a silicon carbide drain layer, a silicon carbide drift layer over the silicon carbide drain layer and a first silicon layer over the silicon carbide drift layer. A second silicon layer over the first silicon layer with a source silicon carbide layer over the second silicon layer. A trench formed through the source silicon carbide layer, through the second silicon layer and into at least partially the first silicon layer. A gate terminal contact formed on the trench with a drain terminal contact formed on the silicon carbide drain layer.
Claims20
A trench power semiconductor device comprising:
- a silicon carbide drain layer;
- a silicon carbide drift layer over the silicon carbide drain layer;
- a first silicon layer over the silicon carbide drift layer;
- a second silicon layer over the first silicon layer;
- a source silicon carbide layer over the second silicon layer;
- a trench formed through the source silicon carbide layer, through the second silicon layer and into at least partially the first silicon layer;
- a gate terminal contact formed on the trench;
- and
- a drain terminal contact formed on the silicon carbide drain layer.
A method for fabricating a trench power semiconductor device, the method comprising:
- forming a silicon carbide drain layer;
- forming a silicon carbide drift layer over the silicon carbide drain layer;
- forming a first silicon layer over the silicon carbide drift layer;
- forming a second silicon layer over the first silicon layer;
- forming a source silicon carbide layer over the second silicon layer;
- forming a trench through the source silicon carbide layer, through the second silicon layer and into at least partially the first silicon layer;
- forming a gate terminal contact on the trench;
- and
- forming a drain terminal contact on the silicon carbide drain layer.
Dependencies are inferred from the claim text.