Planar mosfet having asymmetric wells

A semiconductor device comprising:

• a volume of semiconductor material including a top, an opposite bottom spaced from the top, a first side, and an opposite second side spaced from the first side;
• a source positioned along the top;
• a drift region having a first charge carrier polarity;
• a well having a second charge carrier polarity opposite the first charge carrier polarity, the well extending from the first side and forming a well junction with the drift region;
• and
• a second region adjacent the well having the second charge carrier polarity, the second region forming a second region junction with the drift region, the second region junction being nearer the bottom than the well junction, and the second region junction being nearer the second side of the volume of semiconductor material than the well junction.