H10D 30/667
Having substrates comprising insulating layers
Official title: {having substrates comprising insulating layers, e.g. SOI-VDMOS transistors}
H10D30/667 (Having substrates comprising insulating layers) appears on 78 US grants and 83 published applications in this corpus.
Search patents in H10D- Granted patents
- 78
- Published applications
- 83
- Assignees
- 50
- Inventors
- 138
- Latest grant
- 17 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 1 |
| 2003 | 2 | 0 |
| 2004 | 1 | 3 |
| 2005 | 3 | 4 |
| 2006 | 0 | 0 |
| 2007 | 3 | 1 |
| 2008 | 1 | 2 |
| 2009 | 1 | 4 |
| 2010 | 2 | 1 |
| 2011 | 1 | 3 |
| 2012 | 3 | 5 |
| 2013 | 4 | 8 |
| 2014 | 6 | 3 |
| 2015 | 7 | 6 |
| 2016 | 3 | 6 |
| 2017 | 7 | 6 |
| 2018 | 3 | 3 |
| 2019 | 7 | 7 |
| 2020 | 6 | 6 |
| 2021 | 3 | 4 |
| 2022 | 3 | 5 |
| 2023 | 4 | 3 |
| 2024 | 2 | 0 |
| 2025 | 0 | 0 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor on insulator structure comprising a buried high resistivity layer17 Feb 2026US 12,557,611 B2GlobalWafers Co., Ltd.
- Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices13 Jan 2026US 12,527,019 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device1 Oct 2024US 12,107,159 B2Kabushiki Kaisha Toshiba
- Semiconductor on insulator on wide band-gap semiconductor11 Jun 2024US 12,009,421 B2Texas Instruments Incorporated
- Semiconductor device9 May 2023US 11,646,368 B2Kabushiki Kaisha Toshiba
- Semiconductor structure and fabrication method thereof16 Jul 2026US 2026/0206551 A1Vanguard International Semiconductor Corporation
- Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices2 Apr 2026US 2026/0096125 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor devices and semiconductor devices7 Dec 2023US 2023/0395701 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor on insulator on wide band-gap semiconductor8 Jun 2023US 2023/0178649 A1Texas Instruments Incorporated
- Semiconductor on insulator structure comprising a buried high resistivity layer9 Mar 2023US 2023/0072964 A1GlobalWafers Co., Ltd.
Most cited
By later US patents
- Semiconductor device and method of forming a semiconductor device53US 6,703,684 B2Cambridge Semiconductor Limited · 2004
- Semiconductor device containing a lateral MOS transistor35US 6,177,704 B1Kabushiki Kaisha Toyota Chuo Kenkyusho · 2001
- Complementary semiconductor devices35US 6,303,961 B1Aqere Systems Guardian Corp. · 2001
- Power semiconductor device28US 7,642,597 B2Kabushiki Kaisha Toshiba · 2010
- Semiconductor device and method of forming a semiconductor device26US 6,927,102 B2Cambridge Semiconductor Limited · 2005