Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a third electrode;
• a first conductive member, the first conductive member including a first conductive member end portion and a first conductive member other-end portion, the first conductive member end portion being between the first electrode and the first conductive member other-end portion in the first direction, a position in the first direction of the first conductive member end portion being between a position in the first direction of the first electrode and a position in the first direction of the third electrode, the first conductive member being electrically connected with the second electrode or being electrically connectable with the second electrode;
• a semiconductor member, the semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type;
• and
• a first insulating member,
• the first semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first electrode and the second electrode in the first direction,
• the second semiconductor region being between the first partial region and the third semiconductor region in the first direction,
• the third semiconductor region being electrically connected with the second electrode,
• a second direction from a portion of the third electrode toward the second semiconductor region crossing the first direction,
• a direction from an other portion of the third electrode toward a portion of the first partial region being along the second direction,
• a direction from the second partial region toward the first conductive member being along the first direction,
• a direction from the first conductive member toward the first partial region being along the second direction,
• the first insulating member including a first position, a second position, and a third position,
• a direction from the first conductive member end portion toward the first position being along the second direction,
• the first position being between the first electrode and the second position in the first direction,
• the third position being between the first position and the second position in the first direction,
• the entirety of the second position being between the third position and the third electrode in the first direction,
• a direction between a portion of the first conductive member toward the first position being along the second direction,
• a third potential at the third position being greater than a first potential at the first position and greater than a second potential at the second position,
• wherein
• the third potential is a maximum potential of the first insulating member, and
• a first distance along the first direction between the first position and the third position is greater than 0 times and not more than 3 times a distance along the first direction between the second partial region and the first conductive member end portion.

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a third electrode;
• a first conductive member, the first conductive member including a first conductive member end portion and a first conductive member other-end portion, the first conductive member end portion being between the first electrode and the first conductive member other-end portion in the first direction, a position in the first direction of the first conductive member end portion being between a position in the first direction of the first electrode and a position in the first direction of the third electrode, the first conductive member being electrically connected with the second electrode or being electrically connectable with the second electrode;
• a semiconductor member, the semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type;
• and
• a first insulating member,
• the first semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first electrode and the second electrode in the first direction,
• the second semiconductor region being between the first partial region and the third semiconductor region in the first direction,
• the third semiconductor region being electrically connected with the second electrode,
• a second direction from a portion of the third electrode toward the second semiconductor region crossing the first direction,
• a direction from an other portion of the third electrode toward a portion of the first partial region being along the second direction,
• a direction from the second partial region toward the first conductive member being along the first direction,
• a direction from the first conductive member toward the first partial region being along the second direction,
• at least a portion of the first insulating member being between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member,
• at least a portion of the first insulating member including silicon, oxygen, and a first element,
• the first element including at least one selected from the group consisting of hydrogen, helium, argon, and carbon,
• the first insulating member including a first position, a second position, and a third position,
• a direction from the first conductive member end portion toward the first position being along the second direction,
• the first position being between the first electrode and the second position in the first direction,
• the third position being between the first position and the second position in the first direction,
• the entirety of the second position being between the third position and the third electrode in the first direction,
• a direction between a portion of the first conductive member toward the first position being along the second direction,
• a third concentration of the first element at the third position being greater than a first concentration of the first element at the first position and greater than a second concentration of the first element at the second position,
• wherein
• the third concentration is a maximum of a concentration of the first element in the first insulating member, and
• a first distance along the first direction between the first position and the third position is greater than 0 μm and not more than 1.2 μm.

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a third electrode;
• a first conductive member, the first conductive member including a first conductive member end portion and a first conductive member other-end portion, the first conductive member end portion being between the first electrode and the first conductive member other-end portion in the first direction, a position in the first direction of the first conductive member end portion being between a position in the first direction of the first electrode and a position in the first direction of the third electrode, the first conductive member being electrically connected with the second electrode or being electrically connectable with the second electrode;
• a semiconductor member, the semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type;
• and
• a first insulating member,
• the first semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first electrode and the second electrode in the first direction,
• the second semiconductor region being between the first partial region and the third semiconductor region in the first direction,
• the third semiconductor region being electrically connected with the second electrode,
• a second direction from a portion of the third electrode toward the second semiconductor region crossing the first direction,
• a direction from an other portion of the third electrode toward a portion of the first partial region being along the second direction,
• a direction from the second partial region toward the first conductive member being along the first direction,
• a direction from the first conductive member toward the first partial region being along the second direction,
• the first insulating member including a first position, a second position, and a third position,
• a direction from the first conductive member end portion toward the first position being along the second direction,
• the first position being between the first electrode and the second position in the first direction,
• the third position being between the first position and the second position in the first direction,
• the entirety of the second position being between the third position and the third electrode in the first direction,
• a direction between a portion of the first conductive member toward the first position being along the second direction,
• a third potential at the third position being greater than a first potential at the first position and greater than a second potential at the second position,
• wherein
• a first distance along the first direction between the first position and the third position is greater than 0 μm and not more than 1.2 μm.