Semiconductor on insulator on wide band-gap semiconductor
AssigneeTexas Instruments Incorporated
InventorChristopher Boguslaw Kocon
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a first semiconductor material having a band-gap. The first semiconductor structure has a first surface. An insulating layer has first and second opposing surfaces. The first surface of the insulating layer is on the first surface of the first semiconductor structure. A second semiconductor structure is on the second surface of the insulating layer and includes a second semiconductor material having a band-gap that is smaller than the band-gap of the first semiconductor material. A floating electrode couples the first semiconductor structure to the second semiconductor structure.
Claims20
A semiconductor device, comprising:
- a first semiconductor layer with a planar surface, the first semiconductor layer including a first semiconductor material with a first band-gap, wherein the first semiconductor layer has a p-type region, an n-type region, and a depletion region formed between the p-type and n-type regions;
- an insulating layer with first and second opposing surfaces, the first surface of the insulating layer abutting the planar surface of the first semiconductor layer;
- a second semiconductor layer abutting the second surface of the insulating layer, the second semiconductor layer including a second semiconductor material with a second band-gap less than the first band-gap;
- and
- an electrode coupling the first semiconductor layer to the second semiconductor layer.
A semiconductor device, comprising:
- a first semiconductor layer including a first semiconductor material with a first band-gap, wherein the first semiconductor layer includes a first n-type region and a first p-type region within the first n-type region;
- a dielectric layer with first and second opposing surfaces, the first surface of the dielectric layer abutting the first semiconductor layer;
- a second semiconductor layer abutting the second surface of the dielectric layer, the second semiconductor layer including a second semiconductor material with a second band-gap less than the first band-gap;
- and
- an electrode coupling the first semiconductor layer to the second semiconductor layer.
Dependencies are inferred from the claim text.