Semiconductor device

A semiconductor device, comprising:

• a supporter including a first surface;
• a first conductive part;
• a second conductive part, a first direction from the first conductive part toward the second conductive part being along the first surface;
• a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the first partial region toward the second partial region being along the first surface and crossing the first direction, the third partial region being between the first partial region and the second conductive part in the first direction;
• a second semiconductor region provided between the third partial region and the second conductive part, the second semiconductor region being of a second conductivity type, a third conductive part, a direction from at least a portion of the second semiconductor region toward the third conductive part being along the second direction;
• a first insulating part including a first insulating region, at least a portion of the first insulating region being between the third conductive part and the at least a portion of the second semiconductor region, wherein the first conductive part and the second conductive part extend along a third direction perpendicular to the first surface.

A semiconductor device, comprising:

• a supporter including a first surface;
• a first conductive part;
• a second conductive part, a first direction from the first conductive part toward the second conductive part being along the first surface;
• a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the first partial region toward the second partial region being along the first surface and crossing the first direction, the third partial region being between the first partial region and the second conductive part in the first direction, the third partial region including a counter surface facing the second conductive part, the third partial region and the second conductive part having a Schottky contact;
• a third conductive part, a direction from the counter surface toward the third conductive part being along the second direction;
• and
• a first insulating part including a first insulating region, at least a portion of the first insulating region being between the counter surface and the third conductive part, wherein the third partial region includes a first region and a second region, the first region is between the second region and the second conductive part in the first direction, and a concentration of an impurity of the first conductivity type in the first region is greater than a concentration of an impurity of the first conductivity type in the second region.