H10D 30/668
Having trench gate electrodes
Official title: {having trench gate electrodes, e.g. UMOS transistors}
H10D30/668 (Having trench gate electrodes) appears on 6,356 US grants and 7,838 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,356
- Published applications
- 7,838
- Assignees
- 641
- Inventors
- 5,113
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 6 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 5 | 0 |
| 1987 | 8 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 12 | 0 |
| 1991 | 12 | 0 |
| 1992 | 10 | 0 |
| 1993 | 7 | 0 |
| 1994 | 23 | 0 |
| 1995 | 28 | 0 |
| 1996 | 21 | 0 |
| 1997 | 34 | 0 |
| 1998 | 39 | 0 |
| 1999 | 60 | 0 |
| 2000 | 63 | 0 |
| 2001 | 67 | 43 |
| 2002 | 72 | 100 |
| 2003 | 110 | 122 |
| 2004 | 111 | 146 |
| 2005 | 115 | 170 |
| 2006 | 91 | 172 |
| 2007 | 96 | 159 |
| 2008 | 113 | 221 |
| 2009 | 145 | 232 |
| 2010 | 194 | 245 |
| 2011 | 239 | 253 |
| 2012 | 218 | 320 |
| 2013 | 266 | 328 |
| 2014 | 337 | 365 |
| 2015 | 349 | 406 |
| 2016 | 361 | 417 |
| 2017 | 380 | 374 |
| 2018 | 337 | 351 |
| 2019 | 356 | 412 |
| 2020 | 356 | 387 |
| 2021 | 318 | 363 |
| 2022 | 305 | 455 |
| 2023 | 258 | 465 |
| 2024 | 260 | 493 |
| 2025 | 299 | 467 |
| 2026 | 255 | 372 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Trench-gate semiconductor device with trench including buried source6 Oct 2026US 12,757,437 B2Nexperia B. V.
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Semiconductor device including termination trench structure or segment8 Oct 2026US 2026/0313955 A1Infineon Technologies Dresden GmbH
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Field effect transistor8 Oct 2026US 2026/0313957 A1Denso Corporation
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
- Ultrawide bandgap semiconductor with p-type conductivity and methods of making and use thereof8 Oct 2026US 2026/0313997 A1Ohio State Innovation Foundation
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990