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US 2026/0313997 A1Published application
Ultrawide bandgap semiconductor with p-type conductivity and methods of making and use thereof
AssigneeOhio State Innovation Foundation
InventorsHongping ZHAO, Kaitian ZHANG
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Abstract
Disclosed herein are ultrawide bandgap semiconductors with p-type conductivity and methods of making and use thereof. Ultrawide bandgap oxide semiconductors comprise MaGabOc where M is Li or Na and where a, b, and c assume selected values.
Claims23
A composition comprising ultrawide bandgap oxide semiconductor with p-type conductivity comprising:
- where
- M is Li or Na,
- a is from 0 to 1,
- b is from 0 to 5, and
- c is from 2 to 8,
- with the proviso that at least one of a or b is not 0.
3 more elements
(canceled)
-35. (canceled)
-52. (canceled)
Dependencies are inferred from the claim text.