Semiconductor device and manufacturing method

A semiconductor device comprising a semiconductor body, a gate electrode and a first electrode, wherein

• the semiconductor body comprises a first region which is a source region or an emitter region, and comprises a well region located next to the first region, the first region is of a first conductivity type and the well region is of a different, second conductivity type,
• the well region is adjacent to the gate electrode and is separated from the gate electrode by a gate insulator layer, and
• the first region is electrically contacted by means of the first electrode which is a source electrode or an emitter electrode,
• characterized in that
• in the first region there is a plurality of current limiting regions,
• the current limiting regions are each of at least one electrically insulating material, and
• the current limiting regions are distant from one another, seen in top view of the semiconductor body.