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US 12,756,386 B2Granted
Integrated resistor-transistor-capacitor snubber
AssigneeSemiconductor Components Industries, LLC
InventorsJaume Roig-Guitart, Dean E. Probst, Ashok Challa
Life of this patent
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Abstract
A circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) and a snubber circuit coupled between a drain and a source of the MOSFET. The snubber circuit includes a transistor disposed in parallel to the MOSFET. The transistor has a floating gate. The circuit further includes a capacitor in series with the transistor, and a resistor disposed parallel to the capacitor.
Claims19
A circuit comprising:
- a metal-oxide semiconductor field-effect transistor (MOSFET), formed in a first active area of a die, and including a gate, a source, and a drain;
- and
- a snubber circuit coupled between the drain and the source, the snubber circuit including:
- a transistor disposed in parallel to the MOSFET, the transistor having a floating gate and being formed in a second active area of the die, the transistor being a shielded gate vertical trench transistor having a floating shield plate;
- a capacitor in series with the transistor;
- a first resistor disposed parallel to the capacitor;
- and
- a second resistor directly connected to the floating gate and the floating shield plate.
5 more elements
A semiconductor die comprising:
- a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain;
- a snubber circuit including a transistor disposed in parallel to the MOSFET between the source and the drain, the transistor having a floating gate, the transistor being a shielded gate vertical trench transistor having a floating shield plate;
- and
- a resistor directly connected to the floating gate and the floating shield plate.
1 more element
A method comprising:
- disposing a snubber circuit in parallel with a switching element, the snubber circuit including a snubber transistor having a floating gate, the snubber transistor being a shielded gate vertical trench transistor having a floating shield plate;
- integrating the snubber circuit with the switching element on a semiconductor die;
- and
- capacitively coupling a voltage on a drain of the switching element to the floating gate of the snubber transistor;
- and
- directly connecting a resistor to the floating gate and the floating shield plate.
3 more elements
Dependencies are inferred from the claim text.